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RHK005N03
Transistors
4V Drive Nch MOS FET
RHK005N03
Structure
Silicon N-channel MOS FET
External dimensions (Unit : mm)
SMT3
2.9
1.1
Features
1) Low On-resistance.
2) High speed switching.
(3)
(2)
0.4
(1)
0.8
0.95 0.95
0.15
1.9
Applications
Switching
Packaging specifications and h FE
(1)Source
(2)Gate
(3)Drain
Inner circuit
Each lead has same dimensions
Abbreviated symbol : KU
Package
Taping
(3)
Type
Code
Basic ordering unit (pieces)
T146
3000
RHK005N03
Absolute maximum ratings (Ta=25 ° C)
(2)
? 1
? 1 ESD PROTECTION DIODE (1)
? 2 BODY DIODE
? 2
(1) Source
(2) Gate
(3) Drain
Parameter
Drain-source voltage
Gate-source voltage
Symbol
V DSS
V GSS
Limits
30
± 20
Unit
V
V
Drain current
Total power dissipation
Channel temperature
Range of storage temperature
Continuous
Pulsed
I D
I DP ? 1
P D ? 2
Tch
Tstg
± 500
± 2.0
200
150
? 55 to + 150
mA
A
mW
° C
° C
? 1 Pw ≤ 10 μ s, Duty cycle ≤ 1%
? 2 Each terminal mounted on a recommended land
Thermal resistance
Parameter
Channel to ambient
Symbol
Rth(ch-a) ?
Limits
625
Unit
° C/W
? Each terminal mounted on a recommended land
1/2
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